InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

Abstract

InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current-voltage and capacitance-voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum- to-minimum capacitance ratios greater than those predicted by traditional HBV models were measured. The HBVs' unconventional behavior in terms of charge accumulation layers adjacent to the wide bandgap barrier is discussed.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2008
Accession Number
ADA592425

Entities

People

  • Harvey S. Newman
  • James G. Champlain
  • Mario G. Ancona
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Conduction Bands
  • Diodes
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Photolithography
  • Power Electronics
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Thickness
  • Varactor Diodes

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Microwave Engineering.
  • Thin Film Deposition Science.