Estimation of Residual Nitrogen Concentration in Semi-Insulating 4H-SiC via Low Temperature Photoluminescence

Abstract

The conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark.

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Document Details

Document Type
Technical Report
Publication Date
Jan 28, 2005
Accession Number
ADA592429

Entities

People

  • Benjamin V. Shanabrook
  • Evan R. Glaser
  • W. E. Carlos

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Calibration
  • Copyrights
  • Detection
  • Elements
  • Energy Bands
  • Low Temperature
  • Measurement
  • Military Research
  • Nitrogen
  • Photoluminescence
  • Residuals
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Spectroscopy
  • Transition Metals

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Statistical inference.

Technology Areas

  • Microelectronics