Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain
Abstract
In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300 deg C), low Schottky barrier height for holes (~0.1 eV), low sheet resistance of Ni-InGaSb (53 ohm/square ), and low specific contact resistivity (7.6 x 10) expn -7 ohm cm[expn 2]), show good progress toward antimonide-based metal source/drain (S/D) p-channel metal oxide semiconductor field-effect transistors. Devices with a self-aligned metal S/D were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ON/OFF ratio (>10[expn 4]), subthreshold swing (140 mV/decade), and high effective-field hole mobility of ~510 cm(expn 2)/Vs at sheet charge density of 2 x 10(expn 12) cm(expn -2).
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2013
- Accession Number
- ADA592874
Entities
People
- Aneesh Nainani
- Archana Kumar
- Brian R. Bennett
- Chien-yu Chen
- John B. Boos
- Krishna C. Saraswat
- Ze Yun
Organizations
- United States Naval Research Laboratory