Tuning the Performance of Organic Spintronic Devices Using X-Ray Generated Traps

Abstract

X rays produced during electron-beam deposition of metallic electrodes drastically change the performance of organic spintronic devices. The x rays generate traps with an activation energy of ~0.5 eV in a commonly used organic. These traps lead to a dramatic decrease in spin-diffusion length in organic spin valves. In organic magnetoresistive (OMAR) devices, however, the traps strongly enhance magnetoresistance. OMAR is an intrinsic magnetotransport phenomenon and does not rely on spin injection. We discuss our observations in the framework of currently existing theories.

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Document Details

Document Type
Technical Report
Publication Date
Aug 16, 2012
Accession Number
ADA593012

Entities

People

  • Chuanlin He
  • F. Wang
  • J. Rybicki
  • M. Wohlgenannt
  • Ruiyang Lin
  • T. Sanders
  • Y. Suzuki

Organizations

  • University of Iowa

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Electroluminescence
  • Electron Beams
  • Electronics Laboratories
  • Electrons
  • Heat Of Activation
  • Light Emitting Diodes
  • Materials
  • Materials Science
  • Organic Light Emitting Diodes
  • Quantum Efficiency
  • Quantum Properties
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Spin-Orbit Interaction
  • X Rays

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics