Quasi-Two-Dimensional Electron Gas Behavior in Doped LaAlO3 Thin Films on SrTiO3 Substrates

Abstract

We have demonstrated the growth of Tm and Lu doped LaAlO3 epitaxial thin films on single crystal (001) SrTiO3 substrates. These rare-earth dopants potentially act as sources of localized moment and spin-orbit scattering centers at the interface. Through structural and chemical characterization, we confirm the incorporation of Tm and Lu dopants into highly crystalline LaAlO3 films. The rare earth doping of the La site does not significantly modify the sheet carrier concentration or mobility compared to undoped samples despite the evolution of sheet carrier concentration, mobility, and sheet resistance with LaAlO3 thickness in undoped LaAlO3 films on SrTiO3.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 03, 2013
Accession Number
ADA593015

Entities

People

  • A. J. Grutter
  • C. A. Jenkins
  • Chuanlin He
  • E. Arenholz
  • F. J. Wong
  • M. T. Gray
  • T. D. Sanders
  • U.s. Alaan
  • Y. Suzuki

Organizations

  • University of Iowa

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Charge Carriers
  • Electron Gas
  • Electrons
  • Films
  • Light Sources
  • Magnetic Fields
  • Magnetic Moments
  • Magnetic Properties
  • Magnetometers
  • Materials
  • Materials Science
  • Military Research
  • Quantum Properties
  • Scattering
  • Thin Films
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Wave Propagation and Nonlinear Chaotic Dynamics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space