Temperature Dependence of Optical Linewidth in Single InAs Quantum Dots

Abstract

We consider the temperature dependence of the exciton linewidth in single InAs self-assembled quantum dots. We show that in cases where etched mesas are used to isolate the dots, the magnitude of the linear temperature coefficient and its dependence on mesa size are described well by exciton scattering by acoustic phonons whose lifetimes are given by phonon scattering from the mesa interfaces. This work shows that phonon scattering at interfaces and surfaces typically present in quantum dot structures can be important in dynamical processes in quantum dot systems.

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Document Details

Document Type
Technical Report
Publication Date
Oct 19, 2006
Accession Number
ADA593658

Entities

People

  • M. Bayer
  • S. Rudin
  • T. L. Reinecke

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Angular Momentum
  • Boundaries
  • Crystal Lattice Vibrations
  • Electron Holes
  • Electrons
  • Energy Bands
  • Low Temperature
  • Military Research
  • Optical Properties
  • Particle Physics
  • Quantum Dots
  • Scattering
  • Semiconductors
  • Spectra
  • Wave Mixing
  • Waves

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing