Rare-Earth Chloride Seeded Growth of GaN Nano- and Micro-Crystals
Abstract
A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured confirming that Er3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 30, 2007
- Accession Number
- ADA593666
Entities
People
- B. Kim
- C. R. Eddy Jr.
- J. A. Freitas Jr.
- John A. Caldwell
- Kai Liu
- Michael A. Mastro
- O. Glembocki
- R. L. Henry
- R. T. Holm
Organizations
- United States Naval Research Laboratory