InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors

Abstract

Heterostructures for InAs-channel high-electron-mobility transistors (HEMTs) were investigated. Reactive AlSb buffer and barrier layers were replaced by more stable Al0.7Ga0.3Sb and In0.2Al0.8Sb alloys. The distance between the gate and the channel was reduced to 7 13 nm to allow good aspect ratios for very short gate lengths. In addition, n+-InAs caps were successfully deposited on the In0.2Al0.8Sb upper barrier allowing for low sheet resistance with relatively low sheet carrier density in the channel. These advances are expected to result in InAs-channel HEMTs with enhanced microwave performance and better reliability.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2007
Accession Number
ADA593668

Entities

People

  • Brian R. Bennett
  • Graham A. Cooke
  • H. Kheyrandish
  • Mario G. Ancona
  • N. A. Papanicolaou
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Diffraction
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • Heterojunctions
  • High Electron Mobility Transistors
  • Low Noise Amplifiers
  • Materials
  • Mobility
  • Quantum Wells
  • Resistance
  • Transistors
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing