Growth of High Quality, Epitaxial InSb Nanowires
Abstract
The growth of InSb nanowires on an InSb(1 1 1) substrate in a closed system is described. A high density InSb nanowires was grown by the use of InSb substrates in a torch sealed quartz tube at a temperature of 400 deg C, using a 60 nm size gold colloid catalyst. The typical diameter of the InSb nanowires was 80-200nm and they consisted of nearly equal atomic percent of In and Sb. Transmission electron microscopy showed the wires to be single crystal, with a growth direction of < 1 1 0 >.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 2007
- Accession Number
- ADA593745
Entities
People
- Hyun D. Park
- M. E. Twigg
- Sharka M. Prokes
- Yong Ding
- Zhong L. Wang
Organizations
- United States Naval Research Laboratory