High Mobility P-Channel HFETs Using Strained Sb-based Materials

Abstract

Antimonide-based p-channel HFETs with a 0.25 micro m gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In(sub 0.41)Ga(sub 0.59)Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm(expn 2)/V s and a sheet density of 1.6 x 10(expn 12) cm(expn -2). The devices have a maximum DC transconductance of 133 mS/mm and an f(sub T) and f(sub max) of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.

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Document Details

Document Type
Technical Report
Publication Date
Jul 19, 2007
Accession Number
ADA593755

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • J. G. Champlain
  • Mario G. Ancona
  • N. A. Papanicolaou
  • R. Bass
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Digital Circuits
  • Electron Beam Lithography
  • Electronics
  • Energy Bands
  • Energy Levels
  • Fabrication
  • Field Effect Transistors
  • Ground State
  • Logic Gates
  • Materials
  • Military Research
  • Mobility
  • Modulation
  • Molecular Beam Epitaxy
  • Quantum Wells
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing