Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers

Abstract

We present the results of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy grown mercury cadmium telluride (HgCdTe) on Cd(Se)Te/ Si(211) composite substrates. We examined the variation in the etch pit density (EPD) and overall crystalline quality with respect to annealing temperature, number of annealing cycles, total annealing time, pre-annealed EPD/ crystal quality, buffer layer quality, and buffer layer lattice constant. Using TCA we observed an order of magnitude reduction in the dislocation density of the HgCdTe layers and a corresponding decrease in x-ray full width at half maximum, when the as-grown layer EPD was on the order of 1 9 107 cm 2. Among all the parameters studied, the one with the greatest influence on reducing EPD was the number of annealing cycles. We also noticed a saturation point where the HgCdTe/Si EPD did not decrease below 1 9 106 cm 2, regardless of further TCA treatment or the as-grown EPD value.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA594411

Entities

People

  • G. Brill
  • K. Harrus
  • Mulpuri V. Rao
  • N. Dhar
  • P. S. Wijewarnasuriya
  • S. Farrell
  • Yunhui Chen

Organizations

  • George Mason University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Annealing
  • Composite Materials
  • Crystals
  • Dislocations
  • Electro-Optics
  • Electronic Materials
  • Epitaxial Growth
  • Focal Plane Arrays
  • Focal Planes
  • High Temperature
  • Long Wavelengths
  • Materials
  • Measurement
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • X Rays

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Nanofabrication and Microfabrication.
  • Thin Film Deposition Science.