Device Modeling for Split-Off Band Detectors

Abstract

An approach to develop room temperature detectors is to use transitions between the light/heavy hole bands and the split-off hole band to produce enhanced response at high temperature. Results are presented on a theoretical model to predict the response in these split-off detectors. The model calculates the dark and illuminated currents from the photoabsorption, carrier escape, and transport, explaining the experimental response. The variation in dark current, responsivity, and D with the detector parameters is presented.

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Document Details

Document Type
Technical Report
Publication Date
Sep 18, 2009
Accession Number
ADA595426

Entities

People

  • A. G. Perera
  • K K Choi
  • P. V. Jayaweera
  • P. Wijewarnasuriya
  • S. G. Matsik

Organizations

  • Georgia State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Band Structures
  • Crystal Lattice Vibrations
  • Current Density
  • Detection
  • Detectors
  • Electrons
  • Emitters
  • Energy
  • Energy Bands
  • Energy Transfer
  • High Temperature
  • Long Wavelengths
  • Materials
  • Phonons
  • Scattering
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology