Antimonide-Based Compound Semiconductors for Low-Power Electronics

Abstract

Quantum wells formed from antimonide-based compound semiconductors are exploited in n-channel field-effect transistors (FETs) operating at high speeds with ultra-low power consumption. Compressive strain enhances hole mobilities making these materials strong candidates for p-channel FETs and complementary circuits. Recent work focuses on incorporation of gate oxides and integration of n- and p-channel FETs.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2013
Accession Number
ADA595642

Entities

People

  • Brian R. Bennett
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Compound Semiconductors
  • Digital Circuits
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Mobility
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing