A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

Abstract

The objective of this proposal is to design and characterize components for utilization in a 94GHz temperature compensated low noise amplifier (LNA) using a 45nm SOI CMOS technology. A ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution, a temperature sensor will also be developed in 90nm CMOS to be utilized in conjunction with a III-V based 94 GHz LNA.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2014
Accession Number
ADA596171

Entities

People

  • Xu Yang

Organizations

  • Illinois Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Bipolar Junction Transistors
  • Complementary Metal-Oxide Semiconductors
  • Compound Semiconductors
  • Electromagnetic Fields
  • Electronics Laboratories
  • Energy Consumption
  • Fabrication
  • Heterojunction Bipolar Transistors
  • Low Noise
  • Low Noise Amplifiers
  • Metal Oxide Semiconductors
  • Modules (Electronics)
  • Power Electronics
  • Semiconductors
  • Signal Generators
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics