Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region

Abstract

InAs(0.6)Sb(0.4)/Al(0.75)In(0.25)Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga(1-x) InxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 micormeter and T=150K, devices with 1-micrometer thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 02, 2013
Accession Number
ADA596685

Entities

People

  • Ding Wang
  • Dmitry Donetsky
  • G. Kipshidze
  • Gregory Belenky
  • L. Shterengas
  • Stefan P. Svensson
  • Wendy L. Sarney
  • Youxi Lin

Organizations

  • State University of New York

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Abstracts
  • Band Gaps
  • Ceramic Materials
  • Current Density
  • Detectors
  • Efficiency
  • Electron Microscopy
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Heat Of Activation
  • Long-Wavelength Infrared Radiation
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Efficiency

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing