Can Laser Light Cool Semiconductors?

Abstract

The concept of laser cooling (optical refrigeration) by luminescence up-conversion in solids dates back to 1929 [1]. Pringsheim recognized that thermal vibrational energy can be removed by anti-Stokes fluorescence if a material is excited with photons having energy below the mean fluorescence energy (see Fig. 1). Material purity problems prevented observation of this type of laser cooling until 1995, when it was first demonstrated in ytterbium-doped glass [2]. This was followed soon after by reports of cooling in dye solutions [3] and thulium-doped glass [4]. Attaining net cooling in semiconductors, however, has remained elusive. A key problem has been the inability of luminescence to efficiently escape from a semiconductor due to total internal reflection [5,6]. Although the theory of semiconductor cooling has been tackled previously [7,8], the critical issues of luminescence trapping and redshifting have not been taken into account. These processes have the potential to frustrate attempts to achieve semiconductor net cooling. Here, we resolve this problem and show that laser cooling of semiconductors is feasible.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 2004
Accession Number
ADA597297

Entities

People

  • Mansoor Sheik-bahae
  • Richard I. Epstein

Organizations

  • Los Alamos National Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Coefficients
  • Efficiency
  • Energy
  • Energy Bands
  • Equations
  • Laser Cooling
  • Low Temperature
  • Luminescence
  • Materials
  • New Mexico
  • Quantum Mechanics
  • Refractive Index
  • Scattering
  • Semiconductors
  • Total Internal Reflection

Fields of Study

  • Engineering

Readers

  • Educational Psychology
  • Energy Conservation and Renewable Energy Engineering.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics