Ultrafast Carrier Dynamics in an InAs/InGaAs Quantum Dots-in-a-Well Heterostructure

Abstract

Ultrafast differential transmission spectroscopy is used to explore temperature-dependent carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure. Electron-hole pairs are optically injected into the three dimensional GaAs barriers, after which we monitor carrier relaxation into the two dimensional InGaAs quantum wells and the zero dimensional InAs quantum dots by tuning the probe photon energy. We find that carrier capture and relaxation are dominated by Auger carrier-carrier scattering at low temperatures, with thermal emission playing an increasing role with temperature. Our experiments provide essential insight into carrier relaxation across multiple spatial dimensions.

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Document Details

Document Type
Technical Report
Publication Date
Jan 21, 2008
Accession Number
ADA597330

Entities

People

  • A. D. Stintz
  • Andrew J. Taylor
  • J. Urayama
  • N. Weisse-bernstein
  • P. Rotella
  • R. P. Prasankumar
  • R. S. Attaluri
  • Richard D. Averitt
  • S. Krishna

Organizations

  • Los Alamos National Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electron Holes
  • Electrons
  • Energy Bands
  • Energy Levels
  • Heterojunctions
  • Low Temperature
  • Materials
  • Nanocrystals
  • Physical Properties
  • Quantum Dots
  • Quantum Heterostructures
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Spectroscopy
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing