Advances in Laser Cooling of Semiconductors

Abstract

Laser cooling in semiconductor structures due to anti-Stokes luminescence is reviewed. Theoretical background considering luminescence trapping and red-shifting, the effect of free carrier and back-ground absorption, Pauli bandblocking and the temperature-dependence of various recombination mechanisms are discussed. Recent experimental results demonstrating record external quantum efficiencies (EQE) in GaAs/GaInP heterostructures are described, and conditions favorable for the first observation of laser cooling in semiconductors are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA597489

Entities

People

  • B. Imangholi
  • M. P. Hasselbeck
  • M. Sheik-bahae
  • R. I. Epstein
  • S. Kurtz

Organizations

  • National Renewable Energy Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Efficiency
  • Energy Bands
  • Heterojunctions
  • Lasers
  • Low Temperature
  • Luminescence
  • Materials
  • Optics
  • Quantum Efficiency
  • Quantum Wells
  • Refraction
  • Refractive Index
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing