High-speed >90% Quantum-Efficiency p-i-n Photodiodes with a Resonance Wavelength Adjustable in the 795-835 nm Range
Abstract
We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p i n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 22, 1999
- Accession Number
- ADA599204
Entities
People
- David H. Christensen
- Ekmel Ozbay
- Gokhan Ulu
- Ibrahim Kimukin
- Kris A. Bertness
- M. S. Ünlü
- Mutlu Gokkavas
- Necmi Biyikli
- Orhan Aytur
- Richard P Mirin
Organizations
- Boston University