High Bandwidth-Efficiency Resonant Cavity Enhanced Schottky Photodiodes for 800-850 nm Wavelength Operation

Abstract

High-speed resonant cavity enhanced Schottky photodiodes operating in 800 850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry Perot cavity. The detectors exhibit a peak quantum efficiency of eta=0.5 at lambda = 827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.

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Document Details

Document Type
Technical Report
Publication Date
May 25, 1998
Accession Number
ADA599205

Entities

People

  • B. M. Onat
  • D. H. Christensen
  • E. Ata
  • E. Ozbay
  • K. A. Bertness
  • K. J. Knopp
  • M. Gokkavas
  • M. S. Ünlü
  • R. P. Mirin

Organizations

  • Boston University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bandwidth
  • Cavity Resonators
  • Compound Semiconductors
  • Detectors
  • Distributed Bragg Reflectors
  • Efficiency
  • Fabrication
  • Frequency
  • Frequency Response
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Metal-Semiconductor-Metal Photodetectors
  • Photodetectors
  • Photodiodes
  • Quantum Efficiency
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing