Development of Silicon-Based Group IV Lasers

Abstract

The objective of the project is to develop silicon-based group IV heterostructure lasers by the incorporation of another group IV element of Sn. We have made significant progress toward the milestones described in the proposal. Notable achievements are: (a) direct bandgap group IV materials (cooperated with Sn) is achieved and the first state-of-the-art group IV light-emitting diode (GeSn p-i-n) operated at near infrared with direct emission is demonstrated (Appl. Phys. Lett. 102, 182106 (2013). Editor s Picks on Semiconductor Research from APL (2014).), and (b) photodetector with best clarity around the near to mid-infrared region is illustrated (Appl. Phys. Lett. 103, 231907 (2013), and references within). Our researches are a major milestone towards the realization of the group IV based photonic devices.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2014
Accession Number
ADA600023

Entities

People

  • Hung H. Cheng

Organizations

  • National Taiwan University

Tags

DTIC Thesaurus Topics

  • Current Density
  • Detection
  • Detectors
  • Diodes
  • Electronics
  • Emission
  • Emission Spectra
  • Heterojunctions
  • Light Emitting Diodes
  • Low Temperature
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photodetectors
  • Photonic Devices
  • Semiconductors
  • Subatomic Particles

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics