Electrical Characterization of Spherical Copper Oxide Memristive Array Sensors
Abstract
A new System Protection (SP) technology is explored by using electrical and mechanical interference-sensing devices that are implemented with granular memristive material. The granular materials consist of oxide-coated copper spheres with radii of about 700 micrometer that are placed in contact to produce thin oxide junctions which exhibit memristive behavior. Processes for etching, which compared acetic acid and nitric acid etches, and thermal oxidation at 100 deg C are performed and compared to produce copper spheres with a copper oxide layer over the sphere surface. Oxidized copper spheres are tested as sensor arrays by loading into a capillary tube in an aligned arrangement. The spheres are held in contact to characterize current-voltage behavior for various oxide thicknesses with typical ROFF values in the megaohm range. Electrical characterization of the oxidized copper spheres reveal directly proportional changes to current-voltage hyseteresis in muW under compressive forces. The thinnest oxide exhibited changes of 8.3 to 21.2 muW over 9 mN while the thickest had a response from 0.4 to 2.5 muW over 22.3 mN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 27, 2014
- Accession Number
- ADA601447
Entities
People
- James P. Orta
Organizations
- Air Force Institute of Technology