Failure Mechanisms for III-Nitride HEMT Devices

Abstract

The primary objective of this project is to develop greater predictive knowledge and understanding of nitride HEMT devices and lifetimes. This goal will be accomplished by providing detailed information and insights about failure mechanisms, structural degradation and device lifetimes using advanced electron microscopy techniques.

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Document Details

Document Type
Technical Report
Publication Date
Nov 19, 2013
Accession Number
ADA601810

Entities

People

  • David J Smith
  • Martha R. Mccartney

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Charge Carriers
  • Chemistry
  • Degradation
  • Electron Energy
  • Electron Microscopes
  • Electron Microscopy
  • Electron Mobility
  • Electrons
  • Electrostatic Fields
  • Failure Mode And Effect Analysis
  • High Electron Mobility Transistors
  • High Resolution
  • Microscopes
  • Microscopy
  • Spectroscopy
  • Transmission Electron Microscopy

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics