Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids
Abstract
The objective of this project was to create a novel template of nanovoids that could then be used for integration of a variety of colloidal quantum dots (CQDs) with a III-V matrix. More specifically, the project dealt with the issues related to the creation of in situ nanovoids, the development of sites in these nanovoids for attachment of the CQDs, and finally the ability to encapsulate the CQDs in the III-V matrix. An innovative and novel approach for the fabrication of the nanovoids was demonstrated, using a molecular-beam-epitaxy (MBE)-based in situ etching process that enabled the creation of the nanovoids on a GaSb epilayer using an As flux, thus eliminating the need for post-growth wet or dry etching processes. The As-based etching resulted in crystallographically faceted nanovoids, which are unique to this process. It should be noted that due to surface tension, wet-etching techniques cannot form nanovoids on this scale, while dry etching techniques cannot create faceted voids critical for anchoring CQDs. This project represents a completely novel approach towards the integration of non-epitaxially grown CQDs with MBE-based epitaxial structures, and its successful completion enables the realization of an entirely new class of heterogeneous devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 17, 2014
- Accession Number
- ADA602134
Entities
People
- Ganesh Balakrishnan
- Marek Osinski
Organizations
- University of New Mexico