Synthesis and Characteristics of HgCdSe for IR Detection

Abstract

Techniques were developed for producing epitaxial layers of ZnTe1-x Sex that are lattice-matched to GaSb substrates for use as buffer layers for Hg1-xCdxSe IR-detection layers. Dislocation density values of 7 X 104 cm-2 are obtained from confocal photoluminescence images of the ZnTe1-x Sex layers. Techniques were developed for producing epitaxial layers of Hg 1-xCdxSe with x-values appropriate for optical absorption in the MWIR and LWIR spectral regions. Background carrier concentration values as low as 8 x 1015 cm-3 were achieved in LWIR with promising excess carrier lifetimes. IR Cathodoluminescence was demonstrated to 5.5 micrometer.

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Document Details

Document Type
Technical Report
Publication Date
Mar 11, 2014
Accession Number
ADA602657

Entities

People

  • T. H. Myers

Organizations

  • Texas State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemistry
  • Detection
  • Detectors
  • Electron Microscopes
  • Electron Microscopy
  • Electronic Materials
  • Engineering
  • Infrared Detection
  • Infrared Detectors
  • Materials
  • Measurement
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology