New Chemical Precursors for the Growth of Ferroelectric and Mid-Valent Metal Oxide Films
Abstract
This proposal seeks to prepare improved chemical vapor deposition (CVD) and atomic layer deposition (ALD) precursors to materials that contain Sr, Ba, and Ti and ALD precursors for the mid-valent oxides MO (M = Mo, W), M2O3 (M = Nb, Ta, Mo, W), and MO2 (M = Nb, Ta, Mo, W). These new precursors will be evaluated in film growth trials of MTiO3 (M = Sr, Ba) and mid-valent metal oxide films. Specific objectives include the synthesis and characterization of Sr, Ba, and Ti precursors containing bis(pyrazolyl)methane-derived ligands and Nb (III), Ta(III), Nb(IV), Ta(IV), Mo(II), W(II), Mo(III), W(III), Mo(IV), and W(IV) precursors with amidate-derived ligands, and ALD growth studies of SrTiO3, BaTiO3, MO, M2O3, and MO2 films using the new precursors. Successful execution of the proposed work would afford optimized CVD and ALD precursors for Sr, Ba, and Ti, demonstration of the ALD growth of crystalline MTiO3 films from these precursors, new precursors for mid-valent oxides of Nb, Ta, Mo, and W, and demonstration of the ALD growth of these oxides. This work would broadly impact research in ferroelectric materials containing based upon SrTiO3 and BaTiO3 and could lead to breakthroughs in the development of resistive memory devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 20, 2014
- Accession Number
- ADA603156
Entities
People
- Charles H Winter
Organizations
- Wayne State University