Ultrathin Limit of Exchange Bias Coupling at Oxide Multiferroic/Ferromagnetic Interfaces

Abstract

We have used the concept of oxide heteroepitaxy for creating such artificially engineered interfaces to determine the critical limit of the individual multiferroic and ferromagnetic materials for generating interfacial exchange bias coupling. Aided by in situ monitoring of the growth, high-quality, atomically precise heterointerfaces have been produced with unit cell control of the respective multiferroic and ferromagnet layer thicknesses. Systematic analysis of the magnetic hysteresis loops allowed us to detect exchange bias coupling down to 5 unit cells (2.0 nm) in epitaxial BFO films.

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Document Details

Document Type
Technical Report
Publication Date
Jul 12, 2013
Accession Number
ADA603613

Entities

People

  • G. Rijnders
  • H. J. Molegraaf
  • L. W. Martin
  • M. B. Holcomb
  • M. Huijben
  • N. Balke
  • Paul K. L. Yu
  • R. Ramesh
  • Yuanchen Chu

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Domain Walls
  • Epitaxial Growth
  • Ferroelectric Domains
  • Ferromagnetic Materials
  • Light Sources
  • Magnetic Devices
  • Magnetic Properties
  • Magnetic Transition Temperatures
  • Materials
  • Materials Science
  • Phase Transformations
  • Quantum Properties
  • Spin-Orbit Interaction
  • Transition Temperature
  • Transitions
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.