Influence of Surface Steps on Molecular Beam Epitaxy of Topological Insulators

Abstract

This proposal is aimed at investigating the influence of substrate steps on molecular beam epitaxial growth of Bi2Se3 and Bi2Te3 topological insulators on Si (111). It uses a novel combinatorial approach by creating micro-lens structures on Si(111) substrate. The microlens contains a combination of numerous micro-surfaces with different miscut angles and miscut orientation. By using scanning probe microscopy, we can investigate how different miscut angles and orientations influence the growth process.

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Document Details

Document Type
Technical Report
Publication Date
May 10, 2014
Accession Number
ADA604045

Entities

People

  • Chih-Kang Shih

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Agreements
  • Base Pressure
  • Department Of Defense
  • Diameters
  • Dielectrics
  • Electronics
  • Electronics Industry
  • Engineering
  • Epitaxial Growth
  • Fabrication
  • Manufacturing
  • Mathematics
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Shape
  • Students

Readers

  • Aerospace Engineering
  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene