A Ferroelectric Oxide Made Directly on Silicon

Abstract

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

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Document Details

Document Type
Technical Report
Publication Date
Apr 17, 2009
Accession Number
ADA604893

Entities

People

  • Charles R. Sleasman
  • Cheng Cen
  • Hao Li
  • Jeffrey A Klug
  • Joseph C. Woicik
  • Lena F Kourkoutis
  • Li-peng Wang
  • Maitri P. Warusawithana
  • Philip J. Ryan
  • Yulan Li

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Lattices
  • Crystallography
  • Crystals
  • Diffraction
  • Engineering
  • Field Effect Transistors
  • Isotopes
  • Materials
  • Materials Science
  • Oxides
  • Phase Transformations
  • Sedimentary Rocks
  • Semiconductor Devices
  • Semiconductors
  • Transition Temperature
  • X-Ray Diffraction

Readers

  • Materials Science and Engineering.
  • Petroleum Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene