Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

Abstract

Atomic-layer 2D crystals have unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the interface strongly influences the electronic properties of the overlaying graphene. We demonstrate a novel combination of x-ray scattering and spectroscopy for studying the complexities of such a buried interface structure. This approach employs x-ray standing wave-excited photoelectron spectroscopy in conjunction with x-ray reflectivity to produce a highly resolved chemically sensitive atomic profile for the terminal substrate bilayers, interface, and graphene layers along the SiC[0001] direction.

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Document Details

Document Type
Technical Report
Publication Date
Nov 19, 2013
Accession Number
ADA605574

Entities

People

  • Blanka Detlefs
  • D. Kurt Gaskill
  • Hunter J. Karmel
  • Joerg Zegenhagen
  • Jonathan D. Emery
  • Luke O. Nyakiti
  • Mark Hersam
  • Michael Bedzyk

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Electron Density
  • Electrons
  • Energy Bands
  • Graphene
  • Materials
  • Materials Science
  • Measurement
  • Photoelectrons
  • Scattering
  • Silicon Carbide
  • Solid State Physics
  • Spectra
  • Spectroscopy
  • Standing Waves
  • Synchrotron Radiation
  • X Rays

Fields of Study

  • Physics

Readers

  • Nanocomposite Materials Science
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene