Observation of One-Electron Charge in an Enhancement-Mode InAs Single-Electron Transistor at 4.2 K

Abstract

We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g* factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing

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Document Details

Document Type
Technical Report
Publication Date
May 08, 2006
Accession Number
ADA605577

Entities

People

  • B. H. Hu
  • G. M. Jones
  • Henry Yang
  • M. J. Yang
  • Y. B. Lyanda-geller

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Composite Materials
  • Electron Beam Lithography
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Levels
  • Nanotechnology
  • Observation
  • Quantum Computing
  • Quantum Dots
  • Quantum Information
  • Quantum Properties
  • Quantum Wells
  • Semiconductors
  • Spin-Orbit Interaction
  • Transistors

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots
  • Space