Large-Area InP-Based Crystalline Nanomembrane Flexible Photodetectors

Abstract

Large-area 3 x 3 mm(expn 2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current a few microamperes and high responsivity 0.12 A/W were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2010
Accession Number
ADA605878

Entities

People

  • Guoxuan Qin
  • Hongjun Yang
  • Jesper Berggren
  • Mattias Hammar
  • Richard Soref
  • Weidong Zhou
  • Weiquan Yang
  • Zhenqiang Ma

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Air Force
  • Air Force Research Laboratories
  • Copyrights
  • Dacron
  • Detectors
  • Dielectric Polymers
  • Electrical Engineering
  • Electrical Properties
  • Engineering
  • Light Sources
  • Low Temperature
  • Materials
  • Military Research
  • Photonic Devices
  • Physics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics