Pulsed Power Switching of 4H-SIC Vertical D-Mosfet and Device Characterization

Abstract

The purpose of this research is to characterize and compare CREE s new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE s previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2013
Accession Number
ADA606054

Entities

People

  • Anant K. Agarwal
  • Argenis Bilbao
  • Charles Scozzie
  • James A. Schrock
  • Kevin Lawson
  • Lin Cheng
  • Stephen Bayne
  • William B. Ray Ii

Organizations

  • Texas Tech University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Carbides
  • Compound Semiconductors
  • Current Density
  • Degradation
  • Demographic Cohorts
  • Elements
  • Energy
  • High Temperature
  • Power
  • Pulsed Power
  • Resistance
  • Silicon
  • Silicon Carbide
  • Switching
  • Test Beds
  • Voltage

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.