Electron Transport in Graphene From a Diffusion-Drift Perspective

Abstract

A diffusion-drift treatment of electron and hole transport in macroscopic graphene is presented. The various material response functions that enter the theory are outlined and to the extent possible, specified and calibrated. For purposes of illustration, the theory is applied to a variety of situations involving field-effect devices that are of potential technological interest. Both single and multilayer graphene are discussed, as is the effect of the small bandgaps that have been reported for graphene on SiC.

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Document Details

Document Type
Technical Report
Publication Date
Feb 24, 2010
Accession Number
ADA606338

Entities

People

  • Mario G. Ancona

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Differential Equations
  • Diffusion
  • Electric Fields
  • Electron Density
  • Electronics
  • Electrons
  • Energy Bands
  • Equations
  • Fermi Levels
  • Field Effect Transistors
  • Materials
  • Paper
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene