Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

Abstract

This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco ATLAS Technology Computer-Aided Design (TCAD) physics based simulation software. Physics based models were used to accurately model electrical device parameters including carrier mobility, recombination effects, bandgap narrowing, impact ionization and lattice heating.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2013
Accession Number
ADA607075

Entities

People

  • Aderinto A. Ogunniyi
  • Bejoy N. Pushpakaran
  • Stephen Bayne

Organizations

  • Texas Tech University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Bipolar Junction Transistors
  • Carbides
  • Cell Structure
  • Cells
  • Ceramic Materials
  • Charge Carriers
  • Compound Semiconductors
  • Current Density
  • Mobility
  • Power Electronics
  • Pulsed Power
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Simulations

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology