Lifetime-limiting Defects in n(-) 4H-SiC Epilayers
Abstract
Low-injection minority carrier lifetimes (MCLs) and deep trap spectra have been investigated in n 4H-SiC epilayers of varying layer thicknesses, in order to enable the separation of bulk lifetimes from surface recombination effects. From the linear dependence of the inverse bulk MCL on the concentration of Z1/Z2 defects and from the behavior of the deep trap spectra in 4H-SiC p-i-n diodes under forward bias, we conclude that it is Z1/Z2 alone that controls the MCL in this material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2006
- Accession Number
- ADA608395
Entities
People
- A. Y. Polyakov
- Benjamin V. Shanabrook
- J. J. Sumakeris
- M. J. O'loughlin
- M. Showronski
- P. B. Klein
- S. W. Huh
Organizations
- United States Naval Research Laboratory