Characterization of One-Dimensional Quantum Channels in InAs/AlSb
Abstract
We report on the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a nanofabrication scheme that utilizes a 3-nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4 K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 06, 2002
- Accession Number
- ADA608396
Entities
People
- Henry Yang
- James C. Culbertson
- K. A. Cheng
- M. J. Yang
Organizations
- United States Naval Research Laboratory