Investigation of Impurities in type-II InAs/GaSb Superlattices via Capacitance-Voltage Measurement

Abstract

Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6meV and a total concentration of low 1015 cm 3. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend.

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Document Details

Document Type
Technical Report
Publication Date
Jul 17, 2013
Accession Number
ADA608439

Entities

People

  • A. M. Hoang
  • Abbas Haddadi
  • Bang Le-Huy Nguyen
  • Genyu Chen
  • M. Razeghi
  • P. R. Bijjam
  • S. Bogdanov

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Detection
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Engineering
  • Heat Of Activation
  • Low Temperature
  • Materials
  • Military Research
  • Monomolecular Films
  • N Type Semiconductors
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy