Low-Temperature Transport in Epitaxial CoSi2 Films

Abstract

Low-temperature magnetotransport measurements have been performed in ultra-thin films of CoSi2/Si(111). The electron phase breaking scattering rates were determined from the low field magnetoresistance for films of thickness between 3.9 and 22.0nm. The temperature independent contribution to the phase breaking rate, which was attributed to spin-spin scattering of the conduction electrons, was found to increase as the film thickness is decreased. The origin of this scattering rate and its importance to the low-temperature transport are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA608623

Entities

People

  • Jeevak M. Parpia
  • John F. Ditusa
  • Julia M. Phillips

Organizations

  • Cornell Laboratory of Atomic and Solid State Physics

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Critical Temperature
  • Depression
  • Electron Scattering
  • Electrons
  • Films
  • Information Operations
  • Low Temperature
  • Magnetic Fields
  • Magnetoresistance
  • Materials
  • Materials Science
  • Measurement
  • Scattering
  • Solid State Physics
  • Thickness
  • Thin Films
  • Transport Ships

Fields of Study

  • Physics

Readers

  • Mathematics or Statistics
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene