Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices

Abstract

Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin (approxmately 11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm(exp -1) after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcsec. The FWHM values are similar to reported values for GaN grown by MOCVD on sapphire. The GaN layer has a strong room-temperature photoluminescence band edge emission. Successful demonstration of GaN growth on EG opens up the possibility of III nitride/graphene heterostructure-based electronic devices and promises improved performance.

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Document Details

Document Type
Technical Report
Publication Date
Jun 07, 2013
Accession Number
ADA610232

Entities

People

  • Charles. R. Eddy Jr.
  • Francis J. Kub
  • Jaime A. Freitas
  • Kurt Gaskill
  • Luke O. Nyakiti
  • Michael A. Mastro
  • Neeraj Nepal
  • Rachael L. Myers-ward
  • S. B. Qadri
  • Sandra C. Hernandez
  • Scott G. Walton
  • Travis J. Anderson
  • Virginia D. Wheeler

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystals
  • Diffraction
  • Electrons
  • Epitaxial Growth
  • Graphene
  • Heterojunctions
  • Low Temperature
  • Materials
  • Measurement
  • Military Research
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Two Dimensional
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Physics
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene