Integrated 220 GHz Source Development

Abstract

This report summarizes the technical progress made at NGES during the HiFIVE program developing a 50 W, 220 GHz amplifier based on vacuum electronics technology. Two configurations were investigated: A multi-beam amplifier in a planar magnet and a single-beam device in a cylindrical magnet with radial access. Precision micro-fabrication techniques were used to achieve the stringent specifications for the folded waveguide circuit dimensions and tolerances. We demonstrated high power and good transmission with a five-beam configuration during 2012. Peak output powers up to 31 W were measured at 219 GHz. Even higher powers (55 W) were produced at 214 GHz because of the higher gain at lower frequencies. A power-bandwidth of 247 W-GHz was measured at 214 GHz, and the overall gain was 28.5 dB. We also achieved a beam transmission efficiency of 75% through the RF circuit to the collector. The multi-beam amplifier is relatively complex, and typically results in a larger and heavier device. We also investigated an alternate concept based a compact single-beam 220 GHz amplifier as part of the HiFIVE program. A prototype was fabricated in 2013, and RF testing resulted in powers up to 19.4 W at 212 GHz with a beam transmission efficiency of 99.5%.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 27, 2014
Accession Number
ADA610341

Entities

People

  • David Gallagher
  • Jack Tucek
  • Kenneth Kreischer
  • Mark Basten

Organizations

  • Northrop Grumman

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Assembly
  • Bandwidth
  • Carbon Nanotubes
  • Construction
  • Electron Beams
  • Fabrication
  • Frequency
  • Geometry
  • Jet Propulsion
  • Magnetic Fields
  • Manufacturing
  • Materials
  • Materials Processing
  • Materials Science
  • Measurement
  • Military Research
  • Radio Frequency Devices

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Systems Analysis and Design

Technology Areas

  • Microelectronics