Nanoscale Semiconductor Electronics
Abstract
The top-down fabrication of a semiconductor on insulator (SOI) in-plane GaAs nanowire (NW) metal-oxide-semiconductor field effect transistor fabricated by ion-beam direct etching has been demonstrated. For the gate oxide, a ~15 nm-thick liquid-phase chemically-enhanced oxide has been employed. In-plane NWs with ~200 nm channel width are reported. With the NW channel having cross section ~70 nm x 220 nm and the length 2 micrometers, the device has V(T) ~0.2 V and peak g(m) ~24 microsecond with SS ~ 110-150 mV/dec, which are similar to results achieved with bottom-up GaAs NW devices. Radiation studies with x-ray sources do not show measureable degradation of device performance. Additionally, we demonstrate the growth of III-Sb buffers on GaAs and silicon substrates for both n- and p-channels through the use of an epitaxial array of interfacial misfit dislocations formed between the III-Sb alloy and the substrate. The interfacial misfit array results in the spontaneous relaxation of the highly mismatched III-Sb semiconductor and provides a platform for the realization of high mobility channels on GaAs and Si.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 25, 2015
- Accession Number
- ADA613851
Entities
People
- Ganesh Balakrishnan
- Steven R. Brueck
Organizations
- University of New Mexico