Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

Abstract

The purpose of this report is to investigate the low temperature Photoluminescence (PL) from High Electron Mobility Transistor (HEMT) structures that have been modified by proton irradiation. The samples are aluminum gallium nitride (AlGaN)/gallium nitride (GaN) and indium aluminum nitride (InAlN)/GaN HEMT structures. These samples were cooled to 13 K and excited with Continuous Wave (CW) lasers at 325 and 244 nanometers to look for PL originating from a Two-Dimensional Electron Gas (2DEG).

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2015
Accession Number
ADA614121

Entities

People

  • Adam T. Roberts
  • Henry O. Everitt

Organizations

  • United States Army Research, Development and Engineering Command

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Nitrides
  • Charge Coupled Devices
  • Compound Semiconductors
  • Continuous Waves
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Low Temperature
  • Mobility
  • Nitrides
  • Semiconductors
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics