Separating Test Artifacts from Material Behavior in the Oxidation Studies of HfB2 SiC at 2000 deg C and Above (POSTPRINT)

Abstract

Oxidation characteristics of HfB2-15 vol% SiC prepared by field-assisted sintering was examined at 2000 deg. C by heating it in a zirconia-resistance furnace and by direct electrical resistance heating of the sample. Limitations of the material and the direct electrical resistance heating apparatus were explored by heating samples multiple times and to temperatures in excess of 2300??C. Oxide scales that developed at 2000 deg C from both methods were similar in that they consisted of a SiO2/HfO2 outer layer, a porous HfO2 layer, and a HfO2 layer depleted of SiC. But they differed in scale thicknesses, impurities present, scale morphology/complexity. Possible test artifacts are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2012
Accession Number
ADA614593

Entities

People

  • Carmen M. Carney
  • Michael K. Cinibulk
  • Triplicane A. Parthasarathy

Organizations

  • Universal Energy Systems

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Artifacts
  • Composite Materials
  • Electrical Resistance
  • Governments
  • Impurities
  • Materials
  • Materials Testing
  • Oxidation
  • Oxidation Resistance
  • Oxides
  • Resistance
  • Silicon Carbide
  • Temperature Gradients
  • Test Methods
  • Thickness

Fields of Study

  • Materials science

Readers

  • Surface Engineering/Surface Coating Technology.
  • Thin Film Deposition Science.