Advanced Microstructural Characterization for Development of Improved HgCdTe Detectors and Devices

Abstract

The prime objective of this research is to contribute towards the development of improved HgCdTe (MCT) detectors and devices. Advanced electron microscopy methods, including high-resolution imaging, nanoprobe spectroscopy, and nanoscale elemental mapping, were used to address key issues relating to MCT material growth and processing. These collaborative studies have included: a) Si-based substrates for defect reduction in HgCdTe; b) GaAs-based substrates for growth of HgCdTe; c) Investigation of HgCdSe grown by molecular beam epitaxy; and d) Critical thickness for ZnTe on GaSb(100) and GaSb(211) substrates. These investigations involved leading scientists and engineers from government and industrial laboratories, who prepared samples suitable for systematic microscopy studies. Results from these investigations are briefly summarized as Scientific Progress in the full report.

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Document Details

Document Type
Technical Report
Publication Date
Sep 21, 2014
Accession Number
ADA615384

Entities

People

  • David J Smith

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Compound Semiconductors
  • Detectors
  • Electron Microscopy
  • Electronic Materials
  • Engineering
  • High Angles
  • High Resolution
  • Infrared Detectors
  • Ion Beams
  • Materials
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Students
  • X Ray Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics