Diffraction Limited 3.15 Microns Cascade Diode Lasers

Abstract

In this work we report on design and development of the single spatial mode cascade diode lasers operating near 3.15 microns. The narrow ridge lasers generated more than 40 mW of continuous wave (CW) power at room temperature (RT) in diffraction limited beam. Each gains stage consists of three nominally 1.3%-compressively-strained Ga45In55As30Sb70 quantum wells (QWs), spaced by 50 nm of quinary AlGaInAsSb barriers, and sandwiched between two 200-/250-nm-wide barrier layers of the same composition. The tunnel junction/carrier injector heterostructure was based on 100-microns-thick AlGaAsSb graded layer, 10-nm-thick GaSb layer and moderately doped 25-nm-wide chirped AlSb/InAs superlattice.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2014
Accession Number
ADA615721

Entities

People

  • Aaron Stein
  • G. Kipshidze
  • Gregory Belenky
  • L. Shterengas
  • Ming Lu
  • Rui Liang
  • Takashi Hosoda

Organizations

  • State University of New York

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Continuous Waves
  • Diffraction
  • Efficiency
  • Emission Spectra
  • Far Field
  • Heterojunctions
  • Injectors
  • Laser Diodes
  • Laser Spectroscopy
  • Lasers
  • Military Research
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Quantum Computing
  • Space
  • Space - Hall-Effect Thruster