Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate

Abstract

The objective of this research was to develop 1) direct-bandgap Sn-based group-IV material with very low defect densities and 2) a new type of Sn-based group-IV light-emitting diode (LED) structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si (001) wafers using molecular beam epitaxy (MBE) with low-temperature growth techniques resulted in thick GeSn films with a defect densities of ~105/cm2, which are believed to be the lowest reported in the literature. A new type of planar strip LED was fabricated that exhibits better performance than conventional vertical LEDs, can be integrated with most planar electronic devices, and can also function as an optical cavity.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 22, 2015
Accession Number
ADA615859

Entities

People

  • Greg Sun
  • Hung H. Cheng
  • R. S. Soref

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diodes
  • Electronics
  • Epitaxial Growth
  • Films
  • Light Emitting Diodes
  • Literature
  • Low Temperature
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optics
  • Optomechanics
  • Physical Properties
  • Semiconductors
  • Subatomic Particles
  • Substrates

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics