Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures

Abstract

Investigations were conducted in the optimization of a lift-off photolithography technique using thick negative photoresist (PR) NR9-8000 to achieve and optimize micron-scale interdigitated capacitor (IDC) structures by lift-off process for use in high-frequency electrical characterization measurements. Target feature resolution was in the range of 3 20 m, with PR thickness in the range of 6 20 m. Systematic deviations were made from manufacturer-recommended PR processing conditions to investigate a processing-structure relationship for optimizing of IDC fabrication including PR response to manipulation of substrate material, spin-speed, postexposure bake, exposure dose, and development process conditions. Postexposure bake temperature was found to be the most sensitive and critical parameter for the optimization of PR structures.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2015
Accession Number
ADA615865

Entities

People

  • C. Hubbard
  • D. Shreiber
  • Eric H. Ngo
  • Erik Enriquez
  • M. Ivill
  • Melanie W. Cole
  • S. G. Hirsch

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Capacitors
  • Chemistry
  • Electron Beams
  • Fabrication
  • Hydroxides
  • Laser Microscopy
  • Light Sources
  • Materials
  • Measurement
  • Microscopes
  • Microscopy
  • Military Research
  • Optimization
  • Photolithography
  • Spin Coatings
  • Substrates
  • Thickness

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science