Tunable High Brightness Semiconductor Sources
Abstract
This final report documents research included within the Tunable High Brightness Semiconductor Sources work unit includes several technology advancements. First, theoretical advances in mid-IR type-I quantum well laser efficiency improvement are presented utilizing deep understanding of Auger recombination effects and how to change them through proper laser design. Experimental results are presented to confirm this effect at a wavelength of approximately 2 microns. Future directions are presented, including metamorphic buffer layer grown material, interfacial misfit layers, etc. ??Second, a surface-emitting distributed feedback type-II quantum well laser is introduced and experimental advances are presented. Thirdly, progress in graphene-based saturable absorbers and reverse saturable absorbers are presented. Finally, advances in solder technology for optoelectronics (including, but not limited to mid-IR lasers) is presented with novel high surface quality indium, and intracavity difference frequency generation.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2015
- Accession Number
- ADA615872
Entities
People
- Charles Reyner
- Robert Bedford
- Saima Husaini
- Tuoc Dang
Organizations
- Air Force Research Laboratory