Nucleation and Growth Control of ZnO via Impurity-mediated Crystallization

Abstract

The primary objective is to develop a fabrication method of ZnO based on magnetron sputtering, impurity-mediated crystallization (IMC) , where crystal nucleation and the growth are controlled by adsorbed impurities on the growth surface. By utilizing ZnO films prepared by IMC method as buffer layers (IMC buffer layers), two kinds of high-quality ZnO based semiconductors have been fabricated, the properties of which are superior to those of conventional ZnO films fabricated without IMC buffer layers.

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Document Details

Document Type
Technical Report
Publication Date
Jan 02, 2015
Accession Number
ADA616023

Entities

People

  • Naho Itagaki

Organizations

  • Kyushu University

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Growth
  • Crystallization
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • Fabrication
  • Laser Diodes
  • Materials
  • Materials Science
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Solar Cells
  • Spectroscopy
  • Visible Spectra

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene